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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA622TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The μ PA622TT is a switching device which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
PACKAGE DRAWING (Unit: mm)
2.0 ±0.2
power switch of portable machine and so on.
6
5
4
FEATURES
? 4.0 V drive available
1
2
3
0 to 0.05
? Low on-state resistance
R DS(on)1 = 82 m ? MAX. (V GS = 10 V, I D = 1.5 A)
R DS(on)2 = 120 m ? MAX. (V GS = 4.5 V, I D = 1.0 A)
R DS(on)3 = 139 m ? MAX. (V GS = 4.0 V, I D = 1.0 A)
0.65
0.65
0.8 MAX.
S
ORDERING INFORMATION
PART NUMBER
μ PA622TT-E1-A
μ PA622TT-E2-A
PACKAGE
6 pin WSOF (1620)
0.05 S
1, 2, 5, 6: Drain
3 : Gate
4 : Source
Remark "-A" indicates Pb-free (This product does not contain Pb
in external electrode and other parts.).
"-E1" or "-E2" indicates the unit orientation.
(8 mm embossed carrier tape, 3000 pcs/reel)
0.2 ? 0.05
Marking: WC
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
+0.1
0.1 M S
Drain Current (DC)
I D(DC)
Drain Current (pulse)
I D(pulse)
Drain to Source Voltage (V GS = 0 V) V DSS
Gate to Source Voltage (V DS = 0 V) V GSS
Note1
Note2
30
± 20
± 3.0
± 12
V
V
A
A
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
P T2
Total Power Dissipation P T1
Note1
Channel Temperature T ch
Storage Temperature T stg
0.2
1.3
150
–55 to +150
W
W
°C
°C
Gate
Gate
Body
Diode
Notes 1. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec.
2. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16113EJ2V0DS00 (2nd edition)
Date Published May 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
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